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Proceedings Paper

Organic CMOS technology by interface treatment
Author(s): Niels Benson; Marcus Ahles; Martin Schidleja; Andrea Gassmann; Eric Mankel; Thomas Mayer; Christian Melzer; Roland Schmechel; Heinz von Seggern
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Paper Abstract

In the present paper a new concept towards O-CMOS technology is presented substantiating the importance of the semiconductor/dielectric interface for charge carrier transport in organic semiconductors. It will be demonstrated that by controlling the interface properties of either SiO2 or PMMA, unipolar p- and n-type OFETs can be realized using a single organic semiconductor and even a single metal for source and drain contacts. Two dielectric/semiconductor interface modifications are considered for the realization of complementary OFETs on the basis of pentacene, otherwise known for its exclusive hole transporting properties. Selective modification of the SiO2 dielectric interface with traces of vacuum deposited Ca, allows for electron transport in pentacene and the realization of complementary pentacene OFETs on a single substrate. By this technique electron traps are removed due to a reaction of atomic Ca with oxygen from available hydroxide groups, resulting in the formation of an oxidized Ca layer. In a second approach, it is demonstrated that by selective UV treatment of a PMMA dielectric surface, unipolar n-type pentacene OFETs can be converted to unipolar p-type by the introduction of electron traps in the form of -OH and -COOH groups at the PMMA interface. Both methods allow for the realization of CMOS organic inverter stages with decent electrical properties.

Paper Details

Date Published: 25 August 2006
PDF: 11 pages
Proc. SPIE 6336, Organic Field-Effect Transistors V, 63360S (25 August 2006); doi: 10.1117/12.680049
Show Author Affiliations
Niels Benson, Technische Univ. Darmstadt (Germany)
Marcus Ahles, Technische Univ. Darmstadt (Germany)
Martin Schidleja, Technische Univ. Darmstadt (Germany)
Andrea Gassmann, Technische Univ. Darmstadt (Germany)
Eric Mankel, Technische Univ. Darmstadt (Germany)
Thomas Mayer, Technische Univ. Darmstadt (Germany)
Christian Melzer, Technische Univ. Darmstadt (Germany)
Roland Schmechel, Technische Univ. Darmstadt (Germany)
Heinz von Seggern, Technische Univ. Darmstadt (Germany)

Published in SPIE Proceedings Vol. 6336:
Organic Field-Effect Transistors V
Zhenan Bao; David J. Gundlach, Editor(s)

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