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Proceedings Paper

Electrical conduction through a 2D InP-based photonic crystal
Author(s): A. Berrier; M. Mulot; G. Malm; M. Östling; S. Anand
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Paper Abstract

This work investigates the current transport across two-dimensional PhCs dry etched into InP-based low-index-contrast vertical structures using Ar/Cl2 chemically assisted ion beam etching. The electrical conduction through the PhC field is influenced by the surface potential at the hole sidewalls, which is modified by dry etching. The measured current-voltage (I-V) characteristics are linear before but show a current saturation at higher voltages. This behaviour is confirmed by simulations performed by ISE-TCAD software. We investigate the dependence of the conductance of the PhC area as a function of the geometry of the photonic crystal as well as the material parameters. By comparing the experimental and simulated conductance of the PhC, we deduce that the Fermi level is pinned at 0.1 eV below the conduction band edge. The method presented here can be used for evaluating etching processes and surface passivation methods. It is also applicable for other material systems and sheds new light on current driven PhC tuning.

Paper Details

Date Published: 30 August 2006
PDF: 10 pages
Proc. SPIE 6322, Tuning the Optic Response of Photonic Bandgap Structures III, 63220J (30 August 2006); doi: 10.1117/12.680017
Show Author Affiliations
A. Berrier, Royal Institute of Technology (Sweden)
M. Mulot, Royal Institute of Technology (Sweden)
G. Malm, Royal Institute of Technology (Sweden)
M. Östling, Royal Institute of Technology (Sweden)
S. Anand, Royal Institute of Technology (Sweden)

Published in SPIE Proceedings Vol. 6322:
Tuning the Optic Response of Photonic Bandgap Structures III
Paul V. Braun; Sharon M. Weiss, Editor(s)

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