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Proceedings Paper

Modeling and experimental study of diamond detector radiation response
Author(s): Nikolay B. Zaletaev; Sergey D. Sivachenko
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Paper Abstract

Diamond has the highest radiation-damage level among radiation-detector semiconductor materials. Besides, low carbon nucleus charge, Z=6, provides tissue equivalence of diamond detectors. This made it possible to create unique diamondbased ionizing-radiation detectors possessing properties unachievable, for present time, for other materials. These detectors have found the applications in a number of areas including thermonuclear plasma diagnostics at world leading tokamaks and medical dosimetry. Perfection and new developments of diamond-based detectors, including those on natural and synthetic crystals as well as on CVD films, encounter a number of obstacles, the main of which is related to empirical approach to the development in consequence of the lack of detailed understanding in physical mechanisms of such detector operation. This paper is further development, theoretical and experimental, of our earlier proposed model of the operation of a radiation detector based on high-resistivity semiconductor which first made it possible to explain main experimentally observed peculiarities of characteristics of natural diamond detectors exposed to various kinds of radiation. The model is based on the charge carrier recombination process that ensures the variation of carrier lifetimes depending on the space charge value, in the whole detector volume. All calculations are conducted for two-level model of recombination which fits this requirement. It is shown that a weak generation of free charge carriers from impurity levels in addition to the main band-to-band generation can significantly increase the operation voltages of the detector. A decrease of detector temperature is shown to widen the circle of the materials on which the detectors operating in accordance with the model can be developed. Results of modeling of operation of the detector on detector samples based on silicon, as the most perfect technologically developed material, are presented. The experimental studies were performed at a temperature of 14 K to ensure sufficiently low concentration of trapping impurity centers in this material. A technique is proposed for evaluation of the concentration of trapping levels in high-resistivity semiconductors.

Paper Details

Date Published: 30 August 2006
PDF: 12 pages
Proc. SPIE 6319, Hard X-Ray and Gamma-Ray Detector Physics and Penetrating Radiation Systems VIII, 63190T (30 August 2006); doi: 10.1117/12.679988
Show Author Affiliations
Nikolay B. Zaletaev, Orion Research and Production Association (Russia)
Sergey D. Sivachenko, Orion Research and Production Association (Russia)

Published in SPIE Proceedings Vol. 6319:
Hard X-Ray and Gamma-Ray Detector Physics and Penetrating Radiation Systems VIII
F. Patrick Doty; Larry A. Franks; Arnold Burger; H. Bradford Barber; Hans Roehrig; Ralph B. James, Editor(s)

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