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Proceedings Paper

Temperature genesis of an exciton absorption band in 2H- and 4H-politypes of PBI2
Author(s): N. K. Kramar; V. M. Kramar; Yu. M. Kachmarskii
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Paper Abstract

The reasons of experimentally observed in 2H- and 4H-politypes of layer semiconductor PbI2 anomalous temperature-depending behavior of the exciton absorption bands in the low-temperature region have been investigated. The influence of the weak exciton-phonon interaction of quadratic energy dispersion of Vanier- Mott's exciton with the nondisperse optical, and both the low-energy optical and acoustic bending-wave type phonons there has been considered. It was shown that the low-temperature dynamics of an exciton absorption peak shift in 2H-politype of the lead iodide crystals is related with the concurrent influence of two exciton energy relaxation mechanisms - on both the bending waves and the lattice optical phonons, but in the case of 4H-politype - the influence of the low-energy optical phonons must be taken into account.

Paper Details

Date Published: 14 June 2006
PDF: 6 pages
Proc. SPIE 6254, Seventh International Conference on Correlation Optics, 62541B (14 June 2006); doi: 10.1117/12.679946
Show Author Affiliations
N. K. Kramar, Chernivtsi National Univ. (Ukraine)
V. M. Kramar, Chernivtsi National Univ. (Ukraine)
Yu. M. Kachmarskii, Chernivtsi National Univ. (Ukraine)


Published in SPIE Proceedings Vol. 6254:
Seventh International Conference on Correlation Optics
Oleg V. Angelsky, Editor(s)

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