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Proceedings Paper

Formation of quantum dots in heterostructures in mixed diffusion conditions
Author(s): R. D. Vengrenovich; A. V. Moskalyuk; S. V. Yarema
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Paper Abstract

The size distribution function of islands at semiconductor heterostructures has been computed within the framework ofthe Ostwald ripening, when island growth is provided by dislocation-surface diffusion. It is shown that, in respect to root-mean square deviations of the computed dependences, the proposed mechanism of island growth corresponds to the series of experimental quantum dot arrays in heterostructure Ge/Si (001).

Paper Details

Date Published: 14 June 2006
PDF: 9 pages
Proc. SPIE 6254, Seventh International Conference on Correlation Optics, 625410 (14 June 2006); doi: 10.1117/12.679935
Show Author Affiliations
R. D. Vengrenovich, Yu. Fed'kovych Chernivtsi National Univ. (Ukraine)
A. V. Moskalyuk, Yu. Fed'kovych Chernivtsi National Univ. (Ukraine)
S. V. Yarema, Yu. Fed'kovych Chernivtsi National Univ. (Ukraine)


Published in SPIE Proceedings Vol. 6254:
Seventh International Conference on Correlation Optics
Oleg V. Angelsky, Editor(s)

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