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Proceedings Paper

In-situ reflectivity measurement for antireflection coating on laser diode facet
Author(s): Chetan J. Panchal; Vipul A. Kheraj; Pravin K. Patel; Krunal P. Pandya; Tarun Kumar Sharma
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Paper Abstract

Many applications of Laser diode require antireflection coatings either on one or both the facets of the diode. These include, for example, semiconductor optical amplifiers, optical pumping for solid state lasers and creation of broad band source for tunable external cavity. We have used single layer antireflection coating on the front facet of the laser diode using electron beam evaporation technique to enhance optical power output from the facet. To optimize the coating conditions with precise control over facet reflectance of the laser diode, we have carried out experiment for In-Situ reflectivity measurement. We have used MgF2 as a low refractive index dielectric material for antireflection coating. The actual single layer AR coating consists of λ/4 thick MgF2 film. The reflectivity of the film being deposited is measured on GaAs test substrate, kept in close vicinity of the laser diode bar, with the help of a 657 nm (red) laser diode and a photo detector. A LabVIEW programme, called Virtual Instrument (VI), has been prepared to automate the whole experiment. We have also carried out simulation of facet reflectivity subject to the film thickness being deposited.

Paper Details

Date Published: 28 August 2006
PDF: 8 pages
Proc. SPIE 6286, Advances in Thin-Film Coatings for Optical Applications III, 62860H (28 August 2006); doi: 10.1117/12.679816
Show Author Affiliations
Chetan J. Panchal, M.S. Univ. of Baroda (India)
Vipul A. Kheraj, M.S. Univ. of Baroda (India)
Pravin K. Patel, M.S. Univ. of Baroda (India)
Krunal P. Pandya, M.S. Univ. of Baroda (India)
Tarun Kumar Sharma, Ctr. for Advanced Technology (India)

Published in SPIE Proceedings Vol. 6286:
Advances in Thin-Film Coatings for Optical Applications III
Michael J. Ellison, Editor(s)

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