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Proceedings Paper

Solution processed high-performance organic thin film transistors
Author(s): Tae-Woo Lee; Jung Han Shin; Joo Young Kim; Younghun Byun; Sang Yun Lee
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Paper Abstract

In order to realize the high-performance solution-processed transistors (OTFTs) on plastic substrate, it is essential to have a solution-processible organic gate insulator which can give high field-effect mobility and on/off ratio in the devices and should endure sever photolithography process. Our crosslinked gate insulator film has a good chemical resistance to electrode etchants. However, the etchant exposure of the gate insulators resulted in an increase of the off-current while keeping the on-current the same. We also demonstrate solution processed n-type OTFTs with high mobility based on the soluble derivatives of fullerene (C60) as n-type channel materials. We obtained high electron mobilities of 0.02-0.1 cm2/V.s depending on the workfunction of the source and drain metals, demonstrating that the electron injection is contact-limited. Furthermore, we fabricated n-type OTFTs by all solution deposition process including source and drain metals as well as gate insulators and organic semiconductors. These types of OTFTs can be well suited for a wide range of existing and future flexible circuits and display applications which require a simplified process and low-weight and low-cost products.

Paper Details

Date Published: 25 August 2006
PDF: 10 pages
Proc. SPIE 6336, Organic Field-Effect Transistors V, 63360L (25 August 2006); doi: 10.1117/12.679725
Show Author Affiliations
Tae-Woo Lee, Samsung Advanced Institute of Technology (South Korea)
Jung Han Shin, Samsung Electronics Co., Ltd. (South Korea)
Joo Young Kim, Samsung Advanced Institute of Technology (South Korea)
Younghun Byun, Samsung Advanced Institute of Technology (South Korea)
Sang Yun Lee, Samsung Advanced Institute of Technology (South Korea)


Published in SPIE Proceedings Vol. 6336:
Organic Field-Effect Transistors V
Zhenan Bao; David J. Gundlach, Editor(s)

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