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Proceedings Paper

Optical properties of Er3+ + Yb3+ doped gallium nitride layers
Author(s): Vaclav Prajzler; Eduardo Alves; Christoph Buchal; Ivan Huttel; Jarmila Spirkova; Jiri Oswald; Jiri Zavadil; Vratislav Perina; Vitezslav Jerabek
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Paper Abstract

We report about properties of Gallium Nitride layers doped by Erbium and Erbium/Ytterbium ions. The GaN layers were fabricated by Metal Organic Chemical Vapor Deposition on sapphire substrate, and Er3+ and Yb3+ ions were incorporated into the deposited layers by using ion implantation. After the implantation the samples were annealed in nitrogen atmosphere. The structures of the GaN samples were examined by the X-Ray Diffraction analysis; composition of the samples was measured by Rutherford Backscattering Spectroscopy and Elastic Recoil Detection Analysis. The GaN layers had single crystalline hexagonal wurtzite structure and content of Er3+ and Er3+\Yb3+ ranged from 0.05 to 3.38 at. %. The photoluminescence measurement was carried out at excitation of λex = 632.8 nm (temperature 4 K) and λex = 980 nm (room temperature). Photoluminescence spectra taken at 4 K showed typical erbium 4I13/24I15/2 emission bands. Some of our samples exhibited the desired emission even at the room temperature, which indicated that the samples were of a good quality what concerned their crystallographic homogeneity, as well as distribution and appropriate concentration of the Er3+ and Yb3+.

Paper Details

Date Published: 28 August 2006
PDF: 10 pages
Proc. SPIE 6286, Advances in Thin-Film Coatings for Optical Applications III, 62860K (28 August 2006); doi: 10.1117/12.679420
Show Author Affiliations
Vaclav Prajzler, Czech Technical Univ. (Czech Republic)
Eduardo Alves, Instituto Tecnológico e Nuclear (Portugal)
Christoph Buchal, Institut für Schichten und Grenzflächen (Germany)
Ivan Huttel, Institute of Chemical Technology (Czech Republic)
Jarmila Spirkova, Institute of Chemical Technology (Czech Republic)
Jiri Oswald, Institute of Physics (Czech Republic)
Jiri Zavadil, Institute of Radio Engineering and Electronics (Czech Republic)
Vratislav Perina, Institute of Nuclear Physics (Czech Republic)
Vitezslav Jerabek, Czech Technical Univ. (Czech Republic)


Published in SPIE Proceedings Vol. 6286:
Advances in Thin-Film Coatings for Optical Applications III
Michael J. Ellison, Editor(s)

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