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Proceedings Paper

High performance organic field-effect transistors
Author(s): Wei-Yang Chou; Yu-Shen Mai; Chia-Wei Kuo; Horng-Long Cheng; Yi-Ren Chen; Shih-Ting Lin; Feng-Yu Yang; Dun-Yin Shu; Chi-Chang Liao
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Paper Abstract

The following report presents innovative technique for surface modification and device construction of top-contact pentacene-based thin film transistors (TFTs) with saturation mobility about 2.0 cm2/Vs. In the experiment we have utilized PSPI as a modification layer presenting a non-polar interface on which the semiconductor, pentacene, could grow. The surface of the modification layers was exposed to a polarized ultraviolet light with dose ranging from 0.2 J to 8 J. Ultraviolet light was applied to achieve a non-polar surface on which high performance TFTs have been subsequently fabricated. The experimental results showed that the parasitic contact resistances of silver electrodes could be extracted by gated-transfer length method, and the corrected field-effect mobility of pentacene TFTs for linear region was as high as 2.25 cm2/Vs. In this study, we were able to control the surface energy of polymer-based gate dielectric layers and the surface energy of the PSPI layer increasing the energy from about 38 to 42 mJ/m2 by differentiating doses of polarized ultraviolet light. When the PSPI film was exposed to 1 J of polarized ultraviolet light, the surface energy of PSPI, measured by the contact angle method, was about 38 mJ/m2. The measured energy matched the theoretically calculated surface energy of a pentacene crystal. Hence, the higher mobility OTFTs with low surface energy gate dielectric were obtained by spin-coating the PSPI as a modifier.

Paper Details

Date Published: 25 August 2006
PDF: 7 pages
Proc. SPIE 6336, Organic Field-Effect Transistors V, 63360K (25 August 2006); doi: 10.1117/12.679025
Show Author Affiliations
Wei-Yang Chou, National Cheng Kung Univ. (Taiwan)
Yu-Shen Mai, National Cheng Kung Univ. (Taiwan)
Chia-Wei Kuo, National Cheng Kung Univ. (Taiwan)
Horng-Long Cheng, National Cheng Kung Univ. (Taiwan)
Yi-Ren Chen, National Cheng Kung Univ. (Taiwan)
Shih-Ting Lin, National Cheng Kung Univ. (Taiwan)
Feng-Yu Yang, Industrial Technology Research Institute (Taiwan)
Dun-Yin Shu, Industrial Technology Research Institute (Taiwan)
Chi-Chang Liao, Industrial Technology Research Institute (Taiwan)


Published in SPIE Proceedings Vol. 6336:
Organic Field-Effect Transistors V
Zhenan Bao; David J. Gundlach, Editor(s)

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