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Proceedings Paper

Coherent phenomena in a semiconductor quantum well system: effects of double dark states
Author(s): Evangelos Voutsinas; Antonios Fountoulakis; Andreas F. Terzis; John Boviatsis; Sotirios Baskoutas; Emmanuel Paspalakis
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Paper Abstract

We analyze the steady state and transient properties of the polarization and of the electronic population in a triple semiconductor quantum well structure with tunneling induced interference. We first derive the dark states of the system and show that this structure can lead to double dark states. Then, we show that under the dark state conditions the system can exhibit tunneling induced transparency, slow light, transient gain without inversion and coherent population trapping. The dynamics of the polarization and of the electronic population, as well as the total trapped electronic population in the system, are found to be depended on which dark state condition is satisfied.

Paper Details

Date Published: 14 September 2006
PDF: 9 pages
Proc. SPIE 6321, Nanophotonic Materials III, 63210P (14 September 2006); doi: 10.1117/12.678994
Show Author Affiliations
Evangelos Voutsinas, Univ. of Patras (Greece)
Technological and Educational Institute of Patras (Greece)
Antonios Fountoulakis, Univ. of Patras (Greece)
Andreas F. Terzis, Univ. of Patras (Greece)
John Boviatsis, Technological and Educational Institute of Patras (Greece)
Sotirios Baskoutas, Univ. of Patras (Greece)
Emmanuel Paspalakis, Univ. of Patras (Greece)


Published in SPIE Proceedings Vol. 6321:
Nanophotonic Materials III
Zeno Gaburro; Stefano Cabrini, Editor(s)

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