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Proceedings Paper

Improving photo-switching property of organic photo-FET having photosensitive gate dielectric
Author(s): H. Kawai; T. Kondo; T. Kawai; M. Yoshida; S. Uemura; S. Hoshino; T. Kodzasa; T. Kamata
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Paper Abstract

We fabricated a novel type photo-FET using poly(N-vinylcarbazole) (PVK) as a photosensitive gate dielectric. For the photo-FET, photo-illumination to the PVK insulator layer makes the field-effect mobility μFET two orders of magnitude higher than dark condition. In particular, under blue-light illumination condition the on-off ratio was also a few ten times higher than dark condition. Furthermore, by introducing blocking layer between semiconductor layer and insulator layer lead. We concluded that the improvement of the transistor properties resulted from effective charge accumulation at the conductive channel by photo illuminations.

Paper Details

Date Published: 25 August 2006
PDF: 8 pages
Proc. SPIE 6336, Organic Field-Effect Transistors V, 63361E (25 August 2006); doi: 10.1117/12.678929
Show Author Affiliations
H. Kawai, Tokyo Univ. of Science (Japan)
T. Kondo, Tokyo Univ. of Science (Japan)
T. Kawai, Tokyo Univ. of Science (Japan)
M. Yoshida, National Institute of Advanced Industrial Science and Technology (Japan)
S. Uemura, National Institute of Advanced Industrial Science and Technology (Japan)
S. Hoshino, National Institute of Advanced Industrial Science and Technology (Japan)
T. Kodzasa, National Institute of Advanced Industrial Science and Technology (Japan)
T. Kamata, National Institute of Advanced Industrial Science and Technology (Japan)


Published in SPIE Proceedings Vol. 6336:
Organic Field-Effect Transistors V
Zhenan Bao; David J. Gundlach, Editor(s)

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