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Proceedings Paper

Active two-terminal devices as sources at THz frequencies: concepts, performance, and trends
Author(s): Heribert Eisele
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Paper Abstract

The paper discusses and compares the concepts, performance potential, and most recent experimental results of both classical and novel active two-terminal for low-noise RF power generation at submillimeter-wave frequencies up to 1 THz. These devices use transit-time, transferred-electron, and quantum-mechanical effects (or a combination of them) to create a negative differential resistance at the frequency of interest. Examples of state-of-the-art results are output power levels of more than 3.5 mW at 300 GHz and more than 1.6 MW at 327 GHz from an InP Gunn device as well as more than 140 μW at 355 GHz from a GaAs tunnel-injection transit-time diode.

Paper Details

Date Published: 19 May 2006
PDF: 10 pages
Proc. SPIE 6257, ICONO 2005: Nonlinear Laser Spectroscopy, High Precision Measurements, and Laser Biomedicine and Chemistry, 62570G (19 May 2006); doi: 10.1117/12.678361
Show Author Affiliations
Heribert Eisele, Univ. of Leeds (United Kingdom)


Published in SPIE Proceedings Vol. 6257:
ICONO 2005: Nonlinear Laser Spectroscopy, High Precision Measurements, and Laser Biomedicine and Chemistry
Sergey N. Bagayev; Andrey Chikishev; Alexander Dmitriev; Martial Ducloy; Tony Heinz; Vladilen Letokhov; Alexander Shkurinov; Hiroaki Takahashi, Editor(s)

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