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Proceedings Paper

One-dimensional semiconductor nanostructures: growth, characterization, and device applications
Author(s): Sanjay Mathur; Hao Shen; Sven Barth; Nicole Donia
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Paper Abstract

Molecule-based CVD is applied for the development of 1D semiconducting nanowires. By virtue of the chemical design of the metal-organic precursors, it is possible to achieve the required supersaturation ratio of phase-constituting elements in the gas phase, which allows to grow anisotropic structures with precisely controlled dimension and composition. [Ge(C5H5)2] with labile Ge-C bonds was thermolysed at 300 °C to grow single crystalline Ge nanowires (NWs). For tin oxide nanostructures, [Sn(OBut)4] with relatively strong and preformed Sn-O bonds was employed to synthesize anisotropic rutile phase. Determination of I-V characteristics of Ge NWs in different environments indicate surface passivation, possibly through hydrogen. Radial dimension of SnO2 NWs was varied in the range 30-1000 nm by choosing appropriate size of catalyst particles. Photo-conductance studies on different NW samples revealed a significant 'blue shift' with shrinking wire diameters. Tin oxide nanowires were coated with vanadium oxide by CVD of [VO(OPri)3] on as-grown tin oxide nanowires. Composite SnO2/VOx 1D nanostructures showed a shift to higher wavelength in photo-response peak, when compared to pure SnO2 NWs. We also demonstrate the integration of single NW on pre-patterned electrodes for evaluating sensing and electrical properties on individual nanoobjects.

Paper Details

Date Published: 8 September 2006
PDF: 8 pages
Proc. SPIE 6340, Solar Hydrogen and Nanotechnology, 634008 (8 September 2006); doi: 10.1117/12.678325
Show Author Affiliations
Sanjay Mathur, Leibniz Institute of New Materials (Germany)
Wuerzburg Univ. (Germany)
Hao Shen, Leibniz Institute of New Materials (Germany)
Sven Barth, Leibniz Institute of New Materials (Germany)
Nicole Donia, Leibniz Institute of New Materials (Germany)


Published in SPIE Proceedings Vol. 6340:
Solar Hydrogen and Nanotechnology
Lionel Vayssieres, Editor(s)

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