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Proceedings Paper

Total photoluminescence spectroscopy of GaN nanocrystals doped by Eu3+ ions
Author(s): A. Podhorodecki; M. Nyk; J. Misiewicz; W. Strek
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Paper Abstract

The purpose of this work was to investigate the optical properties of GaN nanocrystals (GaN-nc) doped by Eu3+ ions. The total photoluminescence excitation spectroscopy (TPLE) (where the full emission spectra were recorded for the different excitation wavelengths) has been performed to investigate the absorption properties and the energy transfer between GaN-nc and Eu3+ ions. Nanosized GaN:1%Eu3+-nc with the average grain sizes of ~ 8 nm have been synthesized as a powder by the combustion method with some modifications. In PL spectra the strong emission lines related to Eu3+ ions have been observed with the most intense line at ~614 nm. Additionally, the broad yellow/red emission band related to GaN surface/defect states has been also observed. In recorded TPLE spectra an efficient excitation energy transfer from GaN-nc to Eu3+ has been observed. It has been shown that there are three channels for the excitation of Eu3+ ions: (i) through quantized states in GaN nanocrystals, (ii) through defect-related states in the GaN, (iii) and directly through the excited states of Eu+3 ions. It has been found that for investigated GaN powder the most efficient is the excitation of Eu+3 ions through quantized states in GaN nanocrystals.

Paper Details

Date Published: 14 September 2006
PDF: 7 pages
Proc. SPIE 6321, Nanophotonic Materials III, 63210O (14 September 2006); doi: 10.1117/12.678276
Show Author Affiliations
A. Podhorodecki, Wroclaw Univ. of Technology (Poland)
M. Nyk, Wroclaw Univ. of Technology (Poland)
J. Misiewicz, Wroclaw Univ. of Technology (Poland)
W. Strek, Institute of Low Temperature and Structure Research (Poland)


Published in SPIE Proceedings Vol. 6321:
Nanophotonic Materials III
Zeno Gaburro; Stefano Cabrini, Editor(s)

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