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Proceedings Paper

Autler-Townes splitting of excitons and biexcitons in semiconductors
Author(s): P. I. Khadzhi; L. Yu. Nadkin; D. V. Tkachenko
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Paper Abstract

The behavior of the semiconductor dielectric susceptibility under the stationary action of a strong laser pulse in the range of M-band of luminescence and the test pulse in the exciton range of spectrum is investigated. The well pronounced Autler-Townes effect occurs at the exciton range. The position of the absorption peaks is determined by the amplitude and frequency of pump pulse.

Paper Details

Date Published: 14 June 2006
PDF: 10 pages
Proc. SPIE 6259, ICONO 2005: Nonlinear Optical Phenomena, 625909 (14 June 2006); doi: 10.1117/12.677871
Show Author Affiliations
P. I. Khadzhi, Institute of Applied Physics (Moldova)
L. Yu. Nadkin, Institute of Applied Physics (Moldova)
D. V. Tkachenko, Institute of Applied Physics (Moldova)


Published in SPIE Proceedings Vol. 6259:
ICONO 2005: Nonlinear Optical Phenomena

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