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Proceedings Paper

Laser induced defect formation in GaAs near the optical breakdown threshold
Author(s): S. A. Bakhramov; Sh. D. Payziyev
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Paper Abstract

The investigations of nonlinear-optical properties of crystals GaAs by a z-scan method are carried out. The concentration increase (> 10 times) of defects in a crystal GaAs due to picosecond pulse laser (τ = 35 ps, λ= 1.064μm ) irradiation at a number of laser shots >104 near the optical breakdown threshold intensity was observed.

Paper Details

Date Published: 14 June 2006
PDF: 5 pages
Proc. SPIE 6259, ICONO 2005: Nonlinear Optical Phenomena, 625908 (14 June 2006); doi: 10.1117/12.677870
Show Author Affiliations
S. A. Bakhramov, NPO Akadempribor of Academy of Sciences (Uzbekistan)
Sh. D. Payziyev, NPO Akadempribor of Academy of Sciences (Uzbekistan)


Published in SPIE Proceedings Vol. 6259:
ICONO 2005: Nonlinear Optical Phenomena
Konstantin Drabovich; Vladimir Makarov; Yuen-Ron Shen, Editor(s)

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