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Proceedings Paper

Electronic transport through silicon nanocrystals embedded in SiO2 matrix
Author(s): M. D. Efremov; S. A. Arzhannikova; G. N. Kamaev; G. A. Kachurin; A. V. Kretinin; V. V. Malutina-Bronskaya; D. V. Marin; V. A. Volodin; S. G. Cherkova
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Paper Abstract

The presented work is devoted to investigation of electrical properties of metal-oxide-semiconductor structures containing nanocrystals in silicon dioxide. Nanocrystals were fabricated in the middle of SiO2 layer with use of ion implantation and following thermal treatments at a temperature of ~1000°C. Capacity-voltage (C-V) and current-voltage (I-V) characteristics were measured at room and nitrogen temperatures at various frequencies from 1kHz up to 145kHz. I-V characteristics of MOS-structures with 75nm thick SiO2 layer demonstrated repeatable steps. Position of steps qualitatively corresponds to theoretical one, which were calculated using electron state energies for nanocrystals with size 5 nm. Steps due to Coulomb blockade effect on spin degenerated levels in nanocrystals are resolved in experiment. CV- characteristics displayed sharp frequency dependent peak possibly corresponded to approximately mono-energetic states, which provides transport of electrons through SiOx.

Paper Details

Date Published: 10 June 2006
PDF: 8 pages
Proc. SPIE 6260, Micro- and Nanoelectronics 2005, 62600L (10 June 2006); doi: 10.1117/12.677164
Show Author Affiliations
M. D. Efremov, Institute of Semiconductor Physics (Russia)
S. A. Arzhannikova, Institute of Semiconductor Physics (Russia)
G. N. Kamaev, Institute of Semiconductor Physics (Russia)
G. A. Kachurin, Institute of Semiconductor Physics (Russia)
A. V. Kretinin, Institute of Semiconductor Physics (Russia)
V. V. Malutina-Bronskaya, Institute of Semiconductor Physics (Russia)
D. V. Marin, Institute of Semiconductor Physics (Russia)
V. A. Volodin, Institute of Semiconductor Physics (Russia)
S. G. Cherkova, Institute of Semiconductor Physics (Russia)

Published in SPIE Proceedings Vol. 6260:
Micro- and Nanoelectronics 2005
Kamil A. Valiev; Alexander A. Orlikovsky, Editor(s)

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