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Proceedings Paper

Spin relaxation of holes in Ge quantum dots
Author(s): A. F. Zinovieva; A. V. Nenashev; A. V. Dvurechenskii
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Paper Abstract

Here we investigate theoretically the phonon-assisted spin relaxation of holes in Ge/Si quantum dots (QD). This mechanism is dominant for an isolated QD in external magnetic field H≥O.1 T. In the temperature range T<60 K there are two competitive phonon-assisted spin flip processes: direct one-phonon process (first-order to perturbative strain field) and Raman-type process (second-order). In the framework of tight-binding approximation, relaxation times τ(1) and τ(2), corresponding to these processes, were obtained. The relaxation time τ(1) weakly depends on temperature: τ(1)→const for T→0 (spontaneous transitions) and τ(1)~T-1 for higher T (when induced transitions are dominant). Magnetic field dependence of τ(1) is rather strong: τ(1)~H-5, while the rate of Raman-type processes is almost field-independent when T>gβH/k and strongly depends on the temperature: τ(2)~T-7.

Paper Details

Date Published: 10 June 2006
PDF: 8 pages
Proc. SPIE 6260, Micro- and Nanoelectronics 2005, 62600K (10 June 2006); doi: 10.1117/12.677158
Show Author Affiliations
A. F. Zinovieva, Institute of Semiconductor Physics (Russia)
A. V. Nenashev, Institute of Semiconductor Physics (Russia)
A. V. Dvurechenskii, Institute of Semiconductor Physics (Russia)

Published in SPIE Proceedings Vol. 6260:
Micro- and Nanoelectronics 2005
Kamil A. Valiev; Alexander A. Orlikovsky, Editor(s)

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