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Proceedings Paper

Radiation-induced structure modification in monocrystalline silicon under high-energy C6+ irradiation
Author(s): T. S. Balashov; A. A. Golubev; M. A. Kozodaev; S. V. Rogozhkin; A. D. Fertman; V. I. Turtikov; A. G. Zaluzhnyi
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Paper Abstract

This paper concerns surface morphology and structural modification in silicon after 1.2 GeV C6+ irradiation. A number of experimental techniques was used, including atomic force microscopy, x-ray photoelectron spectroscopy and x-ray diffraction studies. The formation of nanometer-sized hillocks on the surface was revealed. In the bulk of parallel-irradiated specimens amorphous regions formation was discovered.

Paper Details

Date Published: 10 June 2006
PDF: 8 pages
Proc. SPIE 6260, Micro- and Nanoelectronics 2005, 626008 (10 June 2006); doi: 10.1117/12.677148
Show Author Affiliations
T. S. Balashov, A.I. Alikhanov Institute for Theoretical and Experimental Physics (Russia)
A. A. Golubev, A.I. Alikhanov Institute for Theoretical and Experimental Physics (Russia)
M. A. Kozodaev, A.I. Alikhanov Institute for Theoretical and Experimental Physics (Russia)
S. V. Rogozhkin, A.I. Alikhanov Institute for Theoretical and Experimental Physics (Russia)
A. D. Fertman, A.I. Alikhanov Institute for Theoretical and Experimental Physics (Russia)
V. I. Turtikov, A.I. Alikhanov Institute for Theoretical and Experimental Physics (Russia)
A. G. Zaluzhnyi, A.I. Alikhanov Institute for Theoretical and Experimental Physics (Russia)


Published in SPIE Proceedings Vol. 6260:
Micro- and Nanoelectronics 2005
Kamil A. Valiev; Alexander A. Orlikovsky, Editor(s)

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