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Proceedings Paper

Formation of conductive structures in insulate layers by selective removal of atoms technique
Author(s): B. Gurovich; K. Prikhodko; A. Domantovsky; E. Kuleshova; E. Olshansky; K. Maslakov; Y. Lunin
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Paper Abstract

The structure and electric properties of initial oxides and metals (Bi, Ag, Cu, Ni, Co, Mo and W) produced by Selective Removal of oxygen Atoms technique (SRA) were studied. It was found a correspondence of electrical conductivity of SRA metals and pure sputtered metals films. At the same time, low resistance of some oxides, for instance CuO, will initiate big leakage currents inside the layer. Among the investigated materials special attention will be paid to SRA Bi, Mo and W because of the high values of contact resistance and puncture potential with initial oxides. It is shown the adaptability of Selective Removal of Atoms technique for formation of conductive insulated structures in layers for new micro and nano-electronic devices.

Paper Details

Date Published: 10 June 2006
PDF: 8 pages
Proc. SPIE 6260, Micro- and Nanoelectronics 2005, 626005 (10 June 2006); doi: 10.1117/12.677147
Show Author Affiliations
B. Gurovich, Russian Research Ctr. Kurchatov Institute (Russia)
K. Prikhodko, Russian Research Ctr. Kurchatov Institute (Russia)
A. Domantovsky, Russian Research Ctr. Kurchatov Institute (Russia)
E. Kuleshova, Russian Research Ctr. Kurchatov Institute (Russia)
E. Olshansky, Russian Research Ctr. Kurchatov Institute (Russia)
K. Maslakov, Russian Research Ctr. Kurchatov Institute (Russia)
Y. Lunin, lnstitute for System Studies (Russia)

Published in SPIE Proceedings Vol. 6260:
Micro- and Nanoelectronics 2005
Kamil A. Valiev; Alexander A. Orlikovsky, Editor(s)

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