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Proceedings Paper

Doped GaSe nonlinear crystals
Author(s): Alexander A. Tikhomirov; Yuri M. Andreev; Gregory V. Lanskii; Olga V. Voevodina; Sergey Yu. Sarkisov
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Paper Abstract

The physical properties of pure GaSe and the crystals doped with 0.01÷3% Al, In, Te, and S have been observed comparatively to reveal the potentials for frequency conversion of laser emission. It has been shown that GaSe:S(greater than or equal to 3%) is the most promising material for practical applications.

Paper Details

Date Published: 9 June 2006
PDF: 9 pages
Proc. SPIE 6258, ICONO 2005: Novel Photonics Materials: Physics and Optical Diagnostics of Nanostructures, 625809 (9 June 2006); doi: 10.1117/12.677065
Show Author Affiliations
Alexander A. Tikhomirov, Institute of Monitoring of Climatic and Ecological Systems (Russia)
Yuri M. Andreev, Institute of Monitoring of Climatic and Ecological Systems (Russia)
Gregory V. Lanskii, Institute of Monitoring of Climatic and Ecological Systems (Russia)
Olga V. Voevodina, Siberian Physics-Technical Institute (Russia)
Sergey Yu. Sarkisov, Siberian Physics-Technical Institute (Russia)


Published in SPIE Proceedings Vol. 6258:
ICONO 2005: Novel Photonics Materials: Physics and Optical Diagnostics of Nanostructures
Valentin Dmitriev; Vladimir Shalaev; Vladimir Shuvalov; Nikolay Zheludev, Editor(s)

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