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Proceedings Paper

Morphology and structure of PZT films
Author(s): M. V. Silibin; V. M. Roschin; V. B. Yakovlev; M. S. Lovygina
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Paper Abstract

One of the important problem of transition from micro- to nanomeasure elements in modem electronics is the creation of dielectric layers with high permittivity and less than 200 nm thickness. The opportunities of using titanium, hafhium, aluminium, silicon nitride, barium titanium, lead and strontium oxide are considered. One of the most promising directions is the usage of solid solutions of Ti-Zr films.

Paper Details

Date Published: 10 June 2006
PDF: 8 pages
Proc. SPIE 6260, Micro- and Nanoelectronics 2005, 62600F (10 June 2006); doi: 10.1117/12.677064
Show Author Affiliations
M. V. Silibin, Moscow State Institute of Electronic Technology (Russia)
V. M. Roschin, Moscow State Institute of Electronic Technology (Russia)
V. B. Yakovlev, Moscow State Institute of Electronic Technology (Russia)
M. S. Lovygina, Moscow State Institute of Electronic Technology (Russia)


Published in SPIE Proceedings Vol. 6260:
Micro- and Nanoelectronics 2005
Kamil A. Valiev; Alexander A. Orlikovsky, Editor(s)

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