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Proceedings Paper

Optical properties of silicon nanopowders formed using power electron beam evaporation
Author(s): M. D. Efremov; V. A. Volodin; D. V. Marin; S. A. Arzannikova; M. G. Ivanov; S. V. Gorajnov; A. I. Korchagin; V. V. Cherepkov; A. V. Lavrukhin; S. N. Fadeev; R. A. Salimov; S. P. Bardakhanov
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Paper Abstract

Silicon nanopowders were produced using power electron-beam-induced evaporation of bulk silicon ingots in various gas atmospheres. Optical properties of the nanopowders were studied with the use of photoluminescence and Raman spectroscopy techniques. Photoluminescence peaks in the visible region of the spectrum have been detected at room temperature in silicon nanopowders, produced in argon gas atmosphere. Strong short-wavelength shift of the photoluminescence peaks can be result of quantum confinement effect for electrons and holes in small silicon nanocrystals (down to 2 nm in diameter). The size of silicon nanocrystals was estimated from Raman spectroscopy data. The calculated in frame of effective mass model optical gaps for silicon nanocrystals of spherical shape are in good correlation with experimental photoluminescence data. With the use of silicon ingot evaporation by power electron-beam at air atmosphere the Si02 nanopowders were produced. The attempts of deposition of silicon nanocrystal films from the nanopowders on silicon substrates were carried out.

Paper Details

Date Published: 10 June 2006
PDF: 9 pages
Proc. SPIE 6260, Micro- and Nanoelectronics 2005, 62600D (10 June 2006); doi: 10.1117/12.677042
Show Author Affiliations
M. D. Efremov, Institute of Semiconductor Physics (Russia)
V. A. Volodin, Institute of Semiconductor Physics (Russia)
D. V. Marin, Institute of Semiconductor Physics (Russia)
S. A. Arzannikova, Institute of Semiconductor Physics (Russia)
M. G. Ivanov, Novosibirsk State Univ. (Russia)
S. V. Gorajnov, Institute of Mineralogy and Petrography (Russia)
A. I. Korchagin, Institute of Nuclear Physics (Russia)
V. V. Cherepkov, Institute of Nuclear Physics (Russia)
A. V. Lavrukhin, Institute of Nuclear Physics (Russia)
S. N. Fadeev, Institute of Nuclear Physics (Russia)
R. A. Salimov, Institute of Nuclear Physics (Russia)
S. P. Bardakhanov, Institute of Theoretical and Applied Mechanics (Russia)


Published in SPIE Proceedings Vol. 6260:
Micro- and Nanoelectronics 2005

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