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Proceedings Paper

Boron distribution profiling in asymmetrical n+-p silicon photodiodes and new creation concept of selectively sensitive photoelements for megapixel color photoreceivers
Author(s): V. A. Gergel; A. V. Lependin; Yu. I. Tishin; I. V. Vanyushin; V. A. Zimoglyad
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Paper Abstract

Experimental results on spectral photo responsivity obtained for silicon n+-p photodiodes with implanted p+ layer in a silicon substrate are represented. It is demonstrated, that such p+ doping effectively shifts long-wave edge of the photodiode's spectral sensitivity in optical range of light spectrum, depending on the p+ layer bedding depth. A new concept of selectively sensitive photoelements development was stated for megapixel color photoreceivers on the basis of n+-p photodiode structures, containing one or more different (in depths) implanted layers, which form color separation potential barriers and lateral diffusion channels required for collecting of minority carriers generated by quanta of different wavelength.

Paper Details

Date Published: 10 June 2006
PDF: 8 pages
Proc. SPIE 6260, Micro- and Nanoelectronics 2005, 62600C (10 June 2006); doi: 10.1117/12.677027
Show Author Affiliations
V. A. Gergel, Unique ICs LLC (Russia)
A. V. Lependin, Unique ICs LLC (Russia)
Yu. I. Tishin, Unique ICs LLC (Russia)
I. V. Vanyushin, Unique ICs LLC (Russia)
V. A. Zimoglyad, Unique ICs LLC (Russia)


Published in SPIE Proceedings Vol. 6260:
Micro- and Nanoelectronics 2005
Kamil A. Valiev; Alexander A. Orlikovsky, Editor(s)

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