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Proceedings Paper

Dense arrays of Ge nanoclusters induced by low-energy ion-beam assisted deposition on Si02 films
Author(s): A. V. Dvurechenskii; P. L. Novikov; Y. Khang; Zh. V. Smagina; V. A. Armbrister; V. G. Kesler; A. K. Gutakovskii
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Paper Abstract

Ge islands less then 10 nm in base diameter and with a number density of about 8×1011 cm2 were created on Si02 films by low-energy ion-beam assisted deposition in high vacuum. The structures obtained were analyzed by Electron Spectroscopy for Chemical Analysis, Atomic Force Microscopy and High Resolution Electron Microscopy. It was found that due to desorption at 300-375 °C less than 50% of Ge deposited remains at the surface. Only pulse regime of ion-beam action results in formation of nanoclusters. It is suggested that the simultaneous nucleation of Ge islands at pulse ion-beam action is the main reason of high homogeneity of size distribution of Ge nanoislands.

Paper Details

Date Published: 10 June 2006
PDF: 8 pages
Proc. SPIE 6260, Micro- and Nanoelectronics 2005, 626006 (10 June 2006); doi: 10.1117/12.676916
Show Author Affiliations
A. V. Dvurechenskii, Institute of Semiconductor Physics (Russia)
P. L. Novikov, Institute of Semiconductor Physics (Russia)
Y. Khang, Samsung Advanced Institute of Technology (South Korea)
Zh. V. Smagina, Institute of Semiconductor Physics (Russia)
V. A. Armbrister, Institute of Semiconductor Physics (Russia)
V. G. Kesler, Institute of Semiconductor Physics (Russia)
A. K. Gutakovskii, Institute of Semiconductor Physics (Russia)


Published in SPIE Proceedings Vol. 6260:
Micro- and Nanoelectronics 2005
Kamil A. Valiev; Alexander A. Orlikovsky, Editor(s)

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