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Proceedings Paper

Ultra shallow p+-n junctions in Si produced by plasma immersion ion implantation
Author(s): K. Rudenko; S. Averkin; V. Lukichev; A. Orlikovsky; A. Pustovit; A. Vyatkin
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Paper Abstract

We present the results of experiments on PIII application to form the ultra shallow highly doped junctions for ULSI CMOS technology. Experiments were carried out with plasma immersion implanter designed for 150 mm wafers. Two-step process includes the Si-surface pre-amorphizing implantation by Ar+ (Xe+) ions from plasma and subsequent boron doping of n-Si wafer from low pressure plasma of BF3 (ICP HDP-source) by flux of accelerated molecular ions without mass separation. Accelerating voltage of bias pulses is varied in the range of 0.7 - 4.5 kV. Implanted boron was activate by both RTA and it combination with furnace annealing technique. Under experimental conditions, the p-n junctions with depth of 40-70 nm were formed with sheet resistance of p+ layers in the range of 100 - 300 Ohm/square.

Paper Details

Date Published: 10 June 2006
PDF: 9 pages
Proc. SPIE 6260, Micro- and Nanoelectronics 2005, 626003 (10 June 2006); doi: 10.1117/12.676912
Show Author Affiliations
K. Rudenko, lnstitute of Physics and Technology (Russia)
S. Averkin, lnstitute of Physics and Technology (Russia)
V. Lukichev, lnstitute of Physics and Technology (Russia)
A. Orlikovsky, lnstitute of Physics and Technology (Russia)
A. Pustovit, lnstitute of Microelectronics Technology and High-Purity Materials (Russia)
A. Vyatkin, lnstitute of Microelectronics Technology and High-Purity Materials (Russia)


Published in SPIE Proceedings Vol. 6260:
Micro- and Nanoelectronics 2005
Kamil A. Valiev; Alexander A. Orlikovsky, Editor(s)

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