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Proceedings Paper

Current density and exposure sequence effect in electron lithography
Author(s): S. V. Dubonos; M. A. Knyazev; A. A. Svintsov; S. I. Zaitsev
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Paper Abstract

The development of an electron resist on PMMA basis was experimentally shown to depend not only on an exposure dose but on current density and exposure sequence as well. Various exposure doses are required to obtain a uniform development rate at different beam currents, with an exposure dose being the lager, the higher the current rate. Maximum dose changes can be as large as several tens of percent. A model is proposed which is a development of the temperature effect model, i. e. the dependence of an absorbed dose on resist temperature. The model supposes that a resist molecule is in an intermediate state after the interaction with an electron, from which state it can either spontaneously break down, or spontaneously return to the unexcited state, or else return to the unexcited state due to the effect of electrons. A model experiment was made which helped determine the model parameters, the time of intermediate state relaxation, and the characteristic current density. Using the values of the model parameters, it was found that the rate of resist development in some areas exposed to equal doses can be different, with the difference being approximately as large as two times.

Paper Details

Date Published: 10 June 2006
PDF: 9 pages
Proc. SPIE 6260, Micro- and Nanoelectronics 2005, 626002 (10 June 2006); doi: 10.1117/12.676910
Show Author Affiliations
S. V. Dubonos, Institute of Microelectronics Technology (Russia)
M. A. Knyazev, Institute of Microelectronics Technology (Russia)
A. A. Svintsov, Institute of Microelectronics Technology (Russia)
S. I. Zaitsev, Institute of Microelectronics Technology (Russia)

Published in SPIE Proceedings Vol. 6260:
Micro- and Nanoelectronics 2005
Kamil A. Valiev; Alexander A. Orlikovsky, Editor(s)

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