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Proceedings Paper

IR transmission and reflection spectra of C60-doped GaAs
Author(s): Bo Chen; Huahan Zhan; Qihui Wu; Fuchun Xu; Junyong Kang
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Paper Abstract

Three kinds of samples, C60 uniformly-doped, δ-doped and C60-Si co-doped GaAs on GaAs(001) substrates are prepared by molecular beam epitaxy. Infrared ray (IR) transmission and reflection measurements(400-4000 cm-1) have been carried out. The results show similar IR spectra between C60 uniformly-doped and δ-doped GaAs, while C60-Si co-doped GaAs display different optical properties. These phenomena are propably related to the character of C60 adsorption changing from physisorption to chemisorption via variations in surface reconstruction. C60-GaAs and C60-Si bondings may be formed in our samples. In the spectra, it is very difficult to observe direct evidence associated with C60. The C60 in GaAs may have partially decomposed.

Paper Details

Date Published: 23 February 2006
PDF: 5 pages
Proc. SPIE 6150, 2nd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optical Test and Measurement Technology and Equipment, 61504C (23 February 2006); doi: 10.1117/12.676651
Show Author Affiliations
Bo Chen, Xiamen Univ. (China)
Huahan Zhan, Xiamen Univ. (China)
Qihui Wu, Xiamen Univ. (China)
Fuchun Xu, Xiamen Univ. (China)
Junyong Kang, Xiamen Univ. (China)


Published in SPIE Proceedings Vol. 6150:
2nd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optical Test and Measurement Technology and Equipment
Xun Hou; Jiahu Yuan; James C. Wyant; Hexin Wang; Sen Han, Editor(s)

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