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Proceedings Paper

SiO2 on CNT: molecular dynamics simulation
Author(s): Vyacheslav V. Barkaline; Vladislav V. Nelayev; Alexander S. Chashinski
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Paper Abstract

Carbon nanotubes are the basic element of modern nanoelectronic devices. One of the most promising their applications is a carbon nanotube based conducting channel in field-effect transistor with SiO2 dielectric deposited on the nanotube. Simulation of SiOx on CNT technology and some properties of that system were studied by means of molecular dynamics method. MM+ interatomic potential was used for calculations.

Paper Details

Date Published: 9 June 2006
PDF: 8 pages
Proc. SPIE 6253, Ninth International Workshop on Nondestructive Testing and Computer Simulations, 625306 (9 June 2006); doi: 10.1117/12.676302
Show Author Affiliations
Vyacheslav V. Barkaline, Belarusian National Technical Univ. (Belarus)
Vladislav V. Nelayev, Belarusian State Univ. of Informatics and Radioelectronics (Belarus)
Alexander S. Chashinski, Belarusian National Technical Univ. (Belarus)


Published in SPIE Proceedings Vol. 6253:
Ninth International Workshop on Nondestructive Testing and Computer Simulations
Alexander I. Melker, Editor(s)

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