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Proceedings Paper

Nanoscale characterization of localized strain in crystals by tip-enhanced Raman spectroscope in reflection mode
Author(s): Norihiko Hayazawa; Yuika Saito; Masashi Motohashi; Masato Iyoki; Satoshi Kawata
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Paper Abstract

Nanoscale characterization of strained silicon is essential for developing reliable next generation integrated circuits. Vibration mode of Si-Si in strained silicon was selectively enhanced to be observed by surface enhanced Raman spectroscopy technique. Covering the silver island film on a strained silicon layer Raman signal from the strained silicon can be detected with a high sensitivity against the overwhelming background signal from the underlying silicon layer. This technique allowed us for micro-Raman spectroscopy on strained silicon, and is straightforward to nano-Raman spectroscopy by tip-enhanced Raman microscope in which a sharpened metallic tip is used instead. We observe localized strains in strained silicon by tip-enhanced near-field Raman spectroscope in reflection-mode. The tip-enhanced Raman spectra show that the Raman frequency and intensity of strained silicon were different within a crosshatch pattern induced by lattice-mismatch. Micro Raman measurements, however, show only uniform features because of averaging effect due to the diffraction limit of light.

Paper Details

Date Published: 30 August 2006
PDF: 8 pages
Proc. SPIE 6324, Plasmonics: Nanoimaging, Nanofabrication, and their Applications II, 63240L (30 August 2006); doi: 10.1117/12.675808
Show Author Affiliations
Norihiko Hayazawa, RIKEN (Japan)
Yuika Saito, RIKEN (Japan)
Masashi Motohashi, RIKEN (Japan)
Masato Iyoki, SII NanoTechnology Inc. (Japan)
Satoshi Kawata, RIKEN (Japan)
Osaka Univ. (Japan)


Published in SPIE Proceedings Vol. 6324:
Plasmonics: Nanoimaging, Nanofabrication, and their Applications II
Satoshi Kawata; Vladimir M. Shalaev; Din Ping Tsai, Editor(s)

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