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Proceedings Paper

Rare earth doped gallium nitride layers for photonics applications
Author(s): Václav Prajzler; Ivan Hüttel; Jarmila Špirkova; Jiři Oswald; Vratislav Peřina; Jiři Zavadil; Jiři Hamáček; Vladimír Machovič; Zdeněk Burian
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Paper Abstract

We report about fabrication and properties of Gallium Nitride (GaN) layers containing the Rare Earth (RE) ions. Gallium nitride is a promising wide band gaps direct semiconductor material, which doped with the RE ions would play a very important role in various optoelectronics and photonics applications. The GaN thin films were deposited by magnetron sputtering in Ar + N2 gas mixture using Ga2O3 target as the source of Gallium. For the RE doping, the Er2O3, Yb2O3, Pr2O3 and Nd2O3 pellets, or Er and Yb powder were laid on the top of the Ga2O3 target. The GaN layers were deposited on silicon, silica on silicon, Corning glass or quartz substrates. The results of the experiments were evaluated in terms of the relations between the technology/precursors approaches and the composition and luminescence properties of the fabricated thin films.

Paper Details

Date Published: 18 April 2006
PDF: 6 pages
Proc. SPIE 6180, Photonics, Devices, and Systems III, 618018 (18 April 2006); doi: 10.1117/12.675723
Show Author Affiliations
Václav Prajzler, Czech Technical Univ. in Prague (Czech Republic)
Ivan Hüttel, Institute of Chemical Technology (Czech Republic)
Jarmila Špirkova, Institute of Chemical Technology (Czech Republic)
Jiři Oswald, Institute of Physics (Czech Republic)
Vratislav Peřina, Institute of Physics (Czech Republic)
Jiři Zavadil, Institute of Physics (Czech Republic)
Jiři Hamáček, Institute of Chemical Technology (Czech Republic)
Vladimír Machovič, Institute of Chemical Technology (Czech Republic)
Zdeněk Burian, Czech Technical Univ. in Prague (Czech Republic)


Published in SPIE Proceedings Vol. 6180:
Photonics, Devices, and Systems III
Pavel Tománek; Miroslav Hrabovský; Miroslav Miler; Dagmar Senderákova, Editor(s)

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