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Proceedings Paper

Si:Er-based light emitting diodes grown with sublimation MBE technique for optoelectronic applications
Author(s): Viacheslav B. Shmagin; Dmitry Yu. Remizov; Viktor P. Kuznetsov; Vladimir N. Shabanov; Zakhary F. Krasilnik
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Paper Abstract

We examine here various types of Si:Er-based light emitting diodes (LEDs) grown with an original Sublimation MBE technique and radiating at 1.54 microns under p-n junction breakdown. It is concluded that p-n junction breakdown mechanism is the most effective way to control Er-related EL in reverse biased LEDs. Maximal Er-related EL intensity and excitation efficiency at room temperature are achieved in LEDs operating under mixed breakdown regime where tunnel and avalanche breakdown mechanisms present equally. The effective excitation cross section and the lifetime of excited Er3+, the internal quantum efficiency and the thickness of the "dark" region are measured for SMBE grown LEDs radiating under mixed p-n junction breakdown.

Paper Details

Date Published: 18 April 2006
PDF: 6 pages
Proc. SPIE 6180, Photonics, Devices, and Systems III, 618008 (18 April 2006); doi: 10.1117/12.675644
Show Author Affiliations
Viacheslav B. Shmagin, Institute for Physics of Microstructures (Russia)
Dmitry Yu. Remizov, Institute for Physics of Microstructures (Russia)
Viktor P. Kuznetsov, Physico-Technical Research Institute (Russia)
Vladimir N. Shabanov, Physico-Technical Research Institute (Russia)
Zakhary F. Krasilnik, Institute for Physics of Microstructures (Russia)


Published in SPIE Proceedings Vol. 6180:
Photonics, Devices, and Systems III

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