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Proceedings Paper

Silicon photon counting detector optical cross-talk effect
Author(s): Ivan Prochazka; Karel Hamal; Lukas Kral; Josef Blazej
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Paper Abstract

Avalanche photodiodes specifically designed for single photon counting semiconductor avalanche structures have been developed on the basis of various materials: Si, Ge, GaP, GaAs and InGaAs at the Czech Technical University in Prague during the last 20 years. They have been tailored for numerous applications. Recently, there is a strong demand for the photon counting detector in a form of an array; even small arrays 10×1 or 3×3 are of great importance for users. Although the photon counting array can be manufactured, there exists a serious limitation for its performance: the optical cross-talk between individual detecting cells. This cross-talk is caused by the optical emission of the avalanche photon counting structure which accompanies the avalanche multiplication process. We have studied in detail the optical emission of the avalanche photon counting structure in the silicon shallow junction type photodiode. The timing properties, radiation pattern and spectral distribution of the emitted light have been measured for various detection structures and their different operating conditions. The ultimate limit for the cross-talk has been determined and the methods for its limitation have been proposed.

Paper Details

Date Published: 18 April 2006
PDF: 6 pages
Proc. SPIE 6180, Photonics, Devices, and Systems III, 618001 (18 April 2006); doi: 10.1117/12.675634
Show Author Affiliations
Ivan Prochazka, Czech Technical Univ. in Prague (Czech Republic)
Karel Hamal, Czech Technical Univ. in Prague (Czech Republic)
Lukas Kral, Czech Technical Univ. in Prague (Czech Republic)
Josef Blazej, Czech Technical Univ. in Prague (Czech Republic)


Published in SPIE Proceedings Vol. 6180:
Photonics, Devices, and Systems III
Pavel Tománek; Miroslav Hrabovský; Miroslav Miler; Dagmar Senderákova, Editor(s)

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