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Proceedings Paper

Optical and structural characteristics of ZnO films doped with gallium
Author(s): O. A. Novodvorsky; V. Ya. Panchenko; O. D. Khramova; L. S. Gorbatenko; Ye. A. Butorina; C. Wenzel; J. W. Bartha
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Paper Abstract

The ZnO films have been produced on the monocrystalline sapphite substrates (0001) by the pulsed laser deposition method. The photoluminescence spectra of these films have been obtained. The dependence of ZnO films transmission on the gallium admixture concentration has been determined for the spectral region of 200 to 3200 nm. it has been ascertained that the increase in gallium admixture is responsible for the shift of fundamental absorption band edge to the blue, and for the reduction in ZnO films transparency in the IR region. The dependence of the crystallographic parameters (lattice constant C) on the gallium admixture concentration and on the deposition parameters has been found.

Paper Details

Date Published: 26 April 2006
PDF: 10 pages
Proc. SPIE 6161, International Conference on Lasers, Applications, and Technologies 2005: Laser-Assisted Micro- and Nanotechnologies, 61610H (26 April 2006); doi: 10.1117/12.675049
Show Author Affiliations
O. A. Novodvorsky, Institute on Laser and Information Technologies (Russia)
V. Ya. Panchenko, Institute on Laser and Information Technologies (Russia)
O. D. Khramova, Institute on Laser and Information Technologies (Russia)
L. S. Gorbatenko, Institute on Laser and Information Technologies (Russia)
Ye. A. Butorina, Institute on Laser and Information Technologies (Russia)
C. Wenzel, Univ. of Technology (Germany)
J. W. Bartha, Univ. of Technology (Germany)


Published in SPIE Proceedings Vol. 6161:
International Conference on Lasers, Applications, and Technologies 2005: Laser-Assisted Micro- and Nanotechnologies
Vitaly I. Konov; Vladislav Ya. Panchenko; Koji Sugioka; Vadim P. Veiko, Editor(s)

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