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Proceedings Paper

Germanium electroabsorption devices on silicon for optical interconnects
Author(s): Yu-Hsuan Kuo; David A. B. Miller; James S. Harris
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Paper Abstract

Monolithic integration of both electronic and optic components into a silicon-based platform will provide high-speed optical interconnects and solve the power-bandwidth limitations. However, the lack of strong optical effects in silicon has limited the progress in the transmitter-end applications. Recently our research had demonstrated strong quantum-confined Stark effect (QCSE) in germanium quantum-well modulators on silicon. This first strong physical mechanism for group-IV photonics has a comparable behavior to III-V material systems. With proper quantum well structure design, we also demonstrated QCSE in C-band for long distance communications with CMOS-operational temperatures. The device fabrication is also compatible with standard silicon chip processes. Since the QCSE, a type of electroabsorption effect, requires much shorter optical length, it is suitable for device miniaturizations and possible for use in both lateral and vertical modulator configurations. Moreover, silicon-germanium electroabsorption modulators are inherently photodetectors, this advantage will enable efficient transmitter/receiver applications for optical interconnects.

Paper Details

Date Published: 1 March 2006
PDF: 9 pages
Proc. SPIE 6125, Silicon Photonics, 61250B (1 March 2006); doi: 10.1117/12.674733
Show Author Affiliations
Yu-Hsuan Kuo, Stanford Univ. (United States)
David A. B. Miller, Stanford Univ. (United States)
James S. Harris, Stanford Univ. (United States)

Published in SPIE Proceedings Vol. 6125:
Silicon Photonics
Joel A. Kubby; Graham T. Reed, Editor(s)

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