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Proceedings Paper

Monolithic integration of all dielectric based asymmetric filter stacks on p-i-n photodetector
Author(s): Vicknesh Shanmugan; Cao Yu; Ramam Akkipeddi
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Paper Abstract

A conventional p-i-n photodetector designed for absorption in the C-band region has been integrated with a low-cost all-dielectric based filter for single wavelength detection at 1542nm. The dielectric based filter of SiO2 cavity layer sandwiched between two pairs of highly reflecting Si3N4/SiO2 mirrors are deposited by PECVD. The full width at half maximum (FWHM) of the reflectance spectra for the filter is measured to be 9.2nm. Reflectance measurement indicates a transmittivity of 83.6% at 1542nm, while reflecting all other wavelengths from 1400 to 1730nm. Dark-current measurement of the photodetector is in the range of 10-8A at a reverse bias voltage of -2V. A photocurrent enhancement of 4 orders of magnitude, at an incident wavelength of 1542nm for a reverse-bias voltage of -2V is observed.

Paper Details

Date Published: 7 September 2006
PDF: 7 pages
Proc. SPIE 6294, Infrared and Photoelectronic Imagers and Detector Devices II, 62940K (7 September 2006); doi: 10.1117/12.674332
Show Author Affiliations
Vicknesh Shanmugan, Institute of Materials Research and Engineering (Singapore)
Cao Yu, Institute of Materials Research and Engineering (Singapore)
Ramam Akkipeddi, Institute of Materials Research and Engineering (Singapore)


Published in SPIE Proceedings Vol. 6294:
Infrared and Photoelectronic Imagers and Detector Devices II
Randolph E. Longshore; Ashok Sood, Editor(s)

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