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Proceedings Paper

Different deposition technology affecting structure and performance of Si film
Author(s): Xiuhua Fu; Peng Lu; Baoxue Bo; Xiumin Li; Ruojing Yin; Weibo Duan
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Paper Abstract

This paper mainly discusses the Si film which is deposited on the GaAs substrate with the IBAD E-beam coating system. By changing the technical conditions to get Si film with different parameters. Further studied on the test, and optimized processing parameter to get final Si film with more dense structure, higher index and minimum absorption. At the same time, considering the better stress matching of the substrate, selected minimal possible layers but realized even more reflection in the process of matching lower index materials. The mainly parameters are temperature of substrate, vacuum pressure, deposition speed and different gas flow, etc. Detailed analysis and evaluation based on the measuring curves and result of the Si test are presented.

Paper Details

Date Published: 9 June 2006
PDF: 6 pages
Proc. SPIE 6149, 2nd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies, 614937 (9 June 2006); doi: 10.1117/12.674325
Show Author Affiliations
Xiuhua Fu, Changchun Univ. of Science and Technology (China)
Peng Lu, Changchun Univ. of Science and Technology (China)
Baoxue Bo, Changchun Univ. of Science and Technology (China)
Xiumin Li, Changchun Univ. of Science and Technology (China)
Ruojing Yin, Changchun Univ. of Science and Technology (China)
Weibo Duan, Changchun Univ. of Science and Technology (China)


Published in SPIE Proceedings Vol. 6149:
2nd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies
Li Yang; Shangming Wen; Yaolong Chen; Ernst-Bernhard Kley, Editor(s)

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