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Proceedings Paper

ZnO thin films prepared by ion beam enhanced deposition method
Author(s): Ningyi Yuan; Jinhua Liao; Lining Fan; Xiuqing Wang; Yi Zhou
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Paper Abstract

Ion beam enhanced deposition method was adopted to prepare In-N co-doped and Al-N co-doped ZnO films on Si, SiO2 and glass substrates. ZnO mixed with In2O3 or Al2O3 powder sputtering target was used and during the deposition N+/Ar+ mixed beam with an energy of 40KeV and a beam current of 2mA implanted into the deposited films. The XRD results showed that all polycrystalline In-N and Al-N co-doped ZnO films deposited on Si, SiO2 and glass substrates have a preferred (002) orientation. The as-deposited In-N co-doped ZnO film showed p-type and had a resistivity of 2.4Ωcm on SiO2 substrate. After annealed in N2, the lowest resistivity of p type In-N co-doped ZnO films was 0.8Ωcm. While Al-N co-doped ZnO film showed n type.

Paper Details

Date Published: 9 June 2006
PDF: 5 pages
Proc. SPIE 6149, 2nd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies, 61492U (9 June 2006); doi: 10.1117/12.674297
Show Author Affiliations
Ningyi Yuan, Jiangsu Polytechnic Univ. (China)
Jinhua Liao, Jiangsu Polytechnic Univ. (China)
Lining Fan, Jiangsu Polytechnic Univ. (China)
Xiuqing Wang, Jiangsu Polytechnic Univ. (China)
Yi Zhou, Jiangsu Polytechnic Univ. (China)


Published in SPIE Proceedings Vol. 6149:
2nd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies
Li Yang; Shangming Wen; Yaolong Chen; Ernst-Bernhard Kley, Editor(s)

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