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Proceedings Paper

Preparation of Si-based films by pulse laser deposition and luminescence properties
Author(s): Dekai Zhang; Xiaoyun Hu; Ting Li
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Paper Abstract

We report a photoluminescence (PL) study of nanometer Si-based films deposited by Pulse Laser Deposition (PLD).The surface appearance and microstructure of the films were characterized by Atomic Force Microscope (AFM), X-Ray Diffraction (XRD) and Raman scattering spectroscopy (Raman).The effects of several experimental parameters such as gas pressure, atmosphere and anneal temperature on the luminescence properties of the films were studied. The mechanism of PL property of the Si-rich Si02 films was discussed, we suggest that the PL is derived from quantum confinement effect of Si nanometer grains and the non-bridge oxygen vacancy defects of silica.

Paper Details

Date Published: 9 June 2006
PDF: 7 pages
Proc. SPIE 6149, 2nd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies, 61492P (9 June 2006); doi: 10.1117/12.674291
Show Author Affiliations
Dekai Zhang, Northwest Univ. (China)
Xiaoyun Hu, Northwest Univ. (China)
Ting Li, Northwest Univ. (China)


Published in SPIE Proceedings Vol. 6149:
2nd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies

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