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Proceedings Paper

Novel technique of antireflection coatings for semiconductor laser diodes
Author(s): Mingju Nie; Deming Liu; Bichun Hu
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Paper Abstract

Very strict requirements need to be met for producing a high-quality single-layer antireflection coating on laser diodes facets, In order to obtain a facet reflectivity of the order of 10-4, the index of refraction and the layer thickness of single-layer coatings have to be controlled for better than ±0.02 and ±2nm. In this paper, a mixed source material composed of Zirconium Oxide(ZrO2) and Titanium dioxide(TiO2), whose index is appropriate to the single-layer antireflective coating for 1.5μm InGaAsP laser diodes is described, A new method to control the index of refraction; and a simple and accurate method to control the thickness of deposited layer as well as a novel measurement method of low residual reflectivity of Si wafer are also proposed. One facet coated LDs is driven and ASE spectra are measured. The center wavelength shifts about 50 nm from 1610 nm to 1560 nm and the ripple in the gain is less than 0.2 dB and the broad-band is about 35 nm when the reflectivity is less than 4×10-4 by single layer.

Paper Details

Date Published: 9 June 2006
PDF: 5 pages
Proc. SPIE 6149, 2nd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies, 61492O (9 June 2006); doi: 10.1117/12.674290
Show Author Affiliations
Mingju Nie, Huazhong Univ. of Science and Technology (China)
Deming Liu, Huazhong Univ. of Science and Technology (China)
Bichun Hu, Huazhong Univ. of Science and Technology (China)


Published in SPIE Proceedings Vol. 6149:
2nd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies
Li Yang; Shangming Wen; Yaolong Chen; Ernst-Bernhard Kley, Editor(s)

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