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Proceedings Paper

Optimization method for transparent conducting oxide films prepared by DC magnetron sputtering
Author(s): Jun Wang; Jianbo Cheng; Hui Lin; Quan Jiang; Gang Yang; Yadong Jiang
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Paper Abstract

We deposited indium tin oxide (ITO) films on glass substrates with DC magnetron sputtering system and the experiments were scheduled by orthogonal test table L32(48). Sheet resistance, surface morphology and transmittance of films were tested. Effects of eight parameters on electrical and optical properties of ITO films, were discussed in detail. Deposition pressure, flow ratio of argon to oxygen and annealing temperature will greatly affect conductance of ITO films. The best parameters for sputtering ITO are: deposition pressure 2mTorr, flow ratio of argon to oxygen 16:0.5, annealing temperature 700K, distance between target and substrate 15, annealing time 1h, sputtering power 300W, annealing atmosphere pure nitrogen and deposition temperature 500K. Sheet resistance, transmittance in visible region and resistivity of the film prepared with above parameters are 17Ω/, 85.13%, 1.87×10-4Ω•cm, respectively.

Paper Details

Date Published: 9 June 2006
PDF: 5 pages
Proc. SPIE 6149, 2nd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies, 614928 (9 June 2006); doi: 10.1117/12.674272
Show Author Affiliations
Jun Wang, Univ. of Electronic Science and Technology of China (China)
Jianbo Cheng, Univ. of Electronic Science and Technology of China (China)
Hui Lin, Univ. of Electronic Science and Technology of China (China)
Quan Jiang, Univ. of Electronic Science and Technology of China (China)
Gang Yang, Univ. of Electronic Science and Technology of China (China)
Yadong Jiang, Univ. of Electronic Science and Technology of China (China)


Published in SPIE Proceedings Vol. 6149:
2nd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies

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