Share Email Print
cover

Proceedings Paper

Characteristics of front-illuminated visible-blind UV photodetector based on GaN p-i-n photodiodes with high quantum efficiency
Author(s): Da You; Yingwen Tang; Jintong Xu; Haimei Gong
Format Member Price Non-Member Price
PDF $17.00 $21.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

In this work, we reported the fabrication and characterization of an AlxGa1-xN /GaN hetero-epitaxial front-illuminated visible-blind UV photodetector with very high external quantum efficiency. This device was grown on one side of polished sapphire substrate using a low-temperature AlN buffer layer created by three-pocket multi-wafer system metalorganic chemical vapor deposition (MOCVD) with a vertical reactor. This device consisted of a 2.5μm thick GaN n-layer, a 0.4μm thick GaN i-layer and Al0.1Ga0.9N "window layer", followed by a 10 nm GaN:Mg p+ contact layer. In order to investigate the effect of p- Al0.1Ga0.9N thickness on the characteristics of the photodetector, three samples only with different p-AlGaN thicknesses of 0.1μm and 0.15μm were fabricated. All of the device processing was completed using standard semiconductor processing techniques that included photolithography, metallization and etching. Compared the results of these three samples, the sample with 0.15μm thick p-AlGaN possesses the highest quantum efficiency and its zero-bias peak responsivity was found around 0.20A/W at 365 nm, corresponding to an external quantum efficiency of 85.6%. Moreover, this device exhibits a low dark current density of 3.16nA/cm2 at zero-bias.

Paper Details

Date Published: 9 June 2006
PDF: 6 pages
Proc. SPIE 6149, 2nd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies, 614917 (9 June 2006); doi: 10.1117/12.674231
Show Author Affiliations
Da You, Shanghai Institute of Technical Physics (China)
Yingwen Tang, Shanghai Institute of Technical Physics (China)
Jintong Xu, Shanghai Institute of Technical Physics (China)
Haimei Gong, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 6149:
2nd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies
Li Yang; Shangming Wen; Yaolong Chen; Ernst-Bernhard Kley, Editor(s)

© SPIE. Terms of Use
Back to Top