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Proceedings Paper

Analysis and fabrication of a new two dimensional near infrared pincushion silicon based PSD
Author(s): Xunjun Qi; Bin Lin; Lu Lu; Wei Jin; Xiangqun Cao
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Paper Abstract

A new photoelectric model of silicon based position sensitive detector (PSD) is built and the formulas of the photocurrent and spectral response are got with it. The effect of every layer thickness and SiO2 thickness to the spectral response is analysis and calculation. The spectral response of PSD is affected by the thickness of p layer mainly at short wavelength and by the thickness of the depletion layer mainly at long wavelength. With the results, a new silicon based near infrared two dimensional pincushion PSD is designed and fabricated. Some necessary tests show that the peak spectral sensitivity of our device is 0.626A/W at 920nm wavelength.

Paper Details

Date Published: 9 June 2006
PDF: 4 pages
Proc. SPIE 6149, 2nd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies, 61490I (9 June 2006); doi: 10.1117/12.674205
Show Author Affiliations
Xunjun Qi, Zhejiang Univ. (China)
Anhui Normal Univ. (China)
Bin Lin, Zhejiang Univ. (China)
Lu Lu, Zhejiang Univ. (China)
Wei Jin, Zhejiang Univ. (China)
Xiangqun Cao, Zhejiang Univ. (China)


Published in SPIE Proceedings Vol. 6149:
2nd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies
Li Yang; Shangming Wen; Yaolong Chen; Ernst-Bernhard Kley, Editor(s)

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