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Proceedings Paper

Photoelectrical properties of polyaniline/polyimide complex thin film
Author(s): Jianbang Zheng; Chaoqi Hou; Jia Liu; Ju Ren; Jianlin Zhao
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Paper Abstract

Using pyromellitic dianhydride (PMDA) and bis(4-aminophenyl) ether (ODA) as monomer materials, the polyamic acid (PAA), a precursor of polyimide (PI), was synthesized. PAn was doped and modified with the polyamic acid by solution mixing method, and the modified PAn/PAA blend with good solubility and forming-film was obtained. Then uniform PAn/PI complex thin film with good forming-film and thermo-stability can be prepared by solvent casting and followed by thermal imidization process at the temperature of 150oC-250oC for 60 min. Conductance experiments showed the surface conductivity of PAn/PI thin films can raise to 10-5S from 10-10S and change with the increase of the content of PAA. IR and UV-vis spectra showed that it has a chemical doping reaction between PAn and PAA during mixing, and the absorption of PAn/PI complex films in UV-vis region appears red shift and the peak shape becomes broad. The degenerate four-wave mixing experimental results showed that the third-order optical nonlinear susceptibility χ(3) of PAn/PI thin films can be markedly enhanced and the maximum χ(3) can reach 8.85×10-10esu, which presents good third-order nonlinear property.

Paper Details

Date Published: 9 June 2006
PDF: 5 pages
Proc. SPIE 6149, 2nd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies, 61490E (9 June 2006); doi: 10.1117/12.674201
Show Author Affiliations
Jianbang Zheng, Northwestern Polytechnical Univ. (China)
Chaoqi Hou, Northwestern Polytechnical Univ. (China)
Jia Liu, Northwestern Polytechnical Univ. (China)
Ju Ren, Northwestern Polytechnical Univ. (China)
Jianlin Zhao, Northwestern Polytechnical Univ. (China)


Published in SPIE Proceedings Vol. 6149:
2nd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies
Li Yang; Shangming Wen; Yaolong Chen; Ernst-Bernhard Kley, Editor(s)

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