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Proceedings Paper

Influence of Ta doping on the phase transition characteristics of VO2 polycrystalline thin films
Author(s): Jinhua Li; Ningyi Yuan; Taibin Xie; Didi Dan
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Paper Abstract

V2O5 and Ta2O5 mixed powders were pressed as sputtering target. Ta-doped vanadium oxide thin films were deposited on SiO2 substrates by modified Ion Beam Enhanced Deposition (IBED) method. The VO2 film with a preferential orientation (002) was formed after post-annealing in nitrogen or argon atmosphere. The measurement results of resistance dependence on temperature indicated that the vanadium dioxide films showed a typical characteristic of phase transition. The phase transition temperature of the IBED VO2 film doped with 3 atm.% Ta decreased from 68oC to about 48oC. The reasons why the Ta-doping decrease the phase transition temperature were as followed: the atom radius of Ta larger than that of V atom, which introduce strain in the grain; the replacement of When V4+ replaced by Ta5+ the ionic bond could elongate and introduce superfluous electrons in the d valence shell, then make the gap of d energy band to decrease.

Paper Details

Date Published: 9 June 2006
PDF: 5 pages
Proc. SPIE 6149, 2nd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies, 61490B (9 June 2006); doi: 10.1117/12.674198
Show Author Affiliations
Jinhua Li, Jiangsu Polytechnic Univ. (China)
Ningyi Yuan, Jiangsu Polytechnic Univ. (China)
Taibin Xie, Jiangsu Polytechnic Univ. (China)
Didi Dan, Jiangsu Polytechnic Univ. (China)


Published in SPIE Proceedings Vol. 6149:
2nd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies
Li Yang; Shangming Wen; Yaolong Chen; Ernst-Bernhard Kley, Editor(s)

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