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Proceedings Paper

Vertical GaN based light-emitting diodes on metal alloy substrate for solid state lighting application
Author(s): T. Doan; C. Chu; C. Chen; W. Liu; J. Chu; J. Yeh; H. Chen; F. Fan; C. Tran
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Paper Abstract

Vertical GaN based Light Emitting Diodes on metal alloy substrate were realized and characterized for solid state lighting application. An efficiency of more than 70 lumens/watt was achieved. In addition, these LEDs exhibit many advantages over those on sapphire under extreme operation conditions for general lighting application.

Paper Details

Date Published: 22 February 2006
PDF: 6 pages
Proc. SPIE 6134, Light-Emitting Diodes: Research, Manufacturing, and Applications X, 61340G (22 February 2006); doi: 10.1117/12.673987
Show Author Affiliations
T. Doan, SemiLEDs Corp. (United States)
C. Chu, Semi-Photonics (Taiwan)
C. Chen, Semi-Photonics (Taiwan)
W. Liu, Semi-Photonics (Taiwan)
J. Chu, Semi-Photonics (Taiwan)
J. Yeh, Semi-Photonics (Taiwan)
H. Chen, Semi-Photonics (Taiwan)
F. Fan, Semi-Photonics (Taiwan)
C. Tran, SemiLEDs Corp (United States)

Published in SPIE Proceedings Vol. 6134:
Light-Emitting Diodes: Research, Manufacturing, and Applications X
Klaus P. Streubel; H. Walter Yao; E. Fred Schubert, Editor(s)

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