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Proceedings Paper

Development of a GaAs-based BIB detector for sub-mm wavelengths
Author(s): L. A. Reichertz; J. W. Beeman; B. L. Cardozo; G. Jakob; R. Katterloher; N. M. Haegel; E. E. Haller
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Paper Abstract

Gallium arsenide is a promising material for large photoconductor arrays to be operated at submm wavelengths, where currently small stressed germanium arrays are used. The smaller binding energy of shallow donors in GaAs compared to Ge results in response at longer wavelengths without having to apply uniaxial stress. Use of n-type GaAs will greatly simplify the production of detector arrays and therefore allow much larger numbers of pixels. We have grown n-doped GaAs epitaxial films and demonstrated high absorption coefficients at wavelengths exceeding 300 μm. Combined with a high purity GaAs layer, a blocked impurity band (BIB) detector can be formed in order to simultaneously achieve efficient absorption and low dark currents. Recent progress in GaAs epitaxy technology allows production of such multilayer devices in wafer size. We are presenting the characterization results of our preliminary GaAs BIB structures.

Paper Details

Date Published: 6 July 2006
PDF: 8 pages
Proc. SPIE 6275, Millimeter and Submillimeter Detectors and Instrumentation for Astronomy III, 62751S (6 July 2006); doi: 10.1117/12.673039
Show Author Affiliations
L. A. Reichertz, Univ. of California, Berkeley (United States)
Lawrence Berkeley National Lab. (United States)
J. W. Beeman, Lawrence Berkeley National Lab. (United States)
B. L. Cardozo, Univ. of Michigan (United States)
G. Jakob, Max-Planck-Institut für extraterrestrische Physik (Germany)
R. Katterloher, Max-Planck-Institut für extraterrestrische Physik (Germany)
N. M. Haegel, Naval Postgraduate School (United States)
E. E. Haller, Lawrence Berkeley National Lab. (United States)
Univ. of California, Berkeley (United States)


Published in SPIE Proceedings Vol. 6275:
Millimeter and Submillimeter Detectors and Instrumentation for Astronomy III
Jonas Zmuidzinas; Wayne S. Holland; Stafford Withington; William D. Duncan, Editor(s)

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