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Proceedings Paper

Progress in MBE grown type-II superlattice photodiodes
Author(s): Cory J. Hill; Jian V. Li; Jason M. Mumolo; Sarath D. Gunapala
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Paper Abstract

We report on the status of GaSb/InAs type-II superlattice diodes grown and fabricated at the Jet Propulsion Laboratory designed for infrared absorption in the 8-12μm range. Recent devices have produced detectivities as high as 8x1010 Jones with a differential resistance-area product greater than 6 Ohmcm2 at 80K with a long wavelength cutoff of approximately 12μm. The measured quantum efficiency of these front-side illuminated devices is close to 30% in the 10-11μm range without antireflection coatings.

Paper Details

Date Published: 17 May 2006
PDF: 6 pages
Proc. SPIE 6206, Infrared Technology and Applications XXXII, 62060P (17 May 2006); doi: 10.1117/12.672827
Show Author Affiliations
Cory J. Hill, Jet Propulsion Lab. (United States)
Jian V. Li, Jet Propulsion Lab. (United States)
Jason M. Mumolo, Jet Propulsion Lab. (United States)
Sarath D. Gunapala, Jet Propulsion Lab. (United States)


Published in SPIE Proceedings Vol. 6206:
Infrared Technology and Applications XXXII
Bjørn F. Andresen; Gabor F. Fulop; Paul R. Norton, Editor(s)

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