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Proceedings Paper

Advancements in DEPMOSFET device developments for XEUS
Author(s): J. Treis; L. Bombelli; R. Eckart; C. Fiorini; P. Fischer; O. Hälker; S. Herrmann; P. Lechner; G. Lutz; I. Peric; M. Porro; R. H. Richter; G. Schaller; F. Schopper; H. Soltau; L. Strüder; S. Wölfel
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Paper Abstract

DEPMOSFET based Active Pixel Sensor (APS) matrices are a new detector concept for X-ray imaging spectroscopy missions. They can cope with the challenging requirements of the XEUS Wide Field Imager and combine excellent energy resolution, high speed readout and low power consumption with the attractive feature of random accessibility of pixels. From the evaluation of first prototypes, new concepts have been developed to overcome the minor drawbacks and problems encountered for the older devices. The new devices will have a pixel size of 75 μm × 75 μm. Besides 64 × 64 pixel arrays, prototypes with a sizes of 256 × 256 pixels and 128 × 512 pixels and an active area of about 3.6 cm2 will be produced, a milestone on the way towards the fully grown XEUS WFI device. The production of these improved devices is currently on the way. At the same time, the development of the next generation of front-end electronics has been started, which will permit to operate the sensor devices with the readout speed required by XEUS. Here, a summary of the DEPFET capabilities, the concept of the sensors of the next generation and the new front-end electronics will be given. Additionally, prospects of new device developments using the DEPFET as a sensitive element are shown, e.g. so-called RNDR-pixels, which feature repetitive non-destructive readout to lower the readout noise below the 1 e- ENC limit.

Paper Details

Date Published: 15 June 2006
PDF: 12 pages
Proc. SPIE 6276, High Energy, Optical, and Infrared Detectors for Astronomy II, 627610 (15 June 2006); doi: 10.1117/12.672029
Show Author Affiliations
J. Treis, Max-Planck-Institut für extraterrestrische Physik (Germany)
MPI Halbleiterlabor (Germany)
L. Bombelli, Politecnico di Milano (Italy)
R. Eckart, PNSensor GmbH (Germany)
MPI Halbleiterlabor (Germany)
C. Fiorini, Politecnico di Milano (Italy)
P. Fischer, Univ. Mannheim (Germany)
O. Hälker, Max-Planck-Institut für extraterrestrische Physik (Germany)
MPI Halbleiterlabor (Germany)
S. Herrmann, Max-Planck-Institut für extraterrestrische Physik (Germany)
MPI Halbleiterlabor (Germany)
P. Lechner, PNSensor GmbH (Germany)
MPI Halbleiterlabor (Germany)
G. Lutz, Max-Planck-Institut für Physik (Germany)
MPI Halbleiterlabor (Germany)
I. Peric, Univ. Mannheim (Germany)
M. Porro, Max-Planck-Institut für extraterrestrische Physik (Germany)
MPI Halbleiterlabor (Germany)
R. H. Richter, Max-Planck-Institut für Physik (Germany)
MPI Halbleiterlabor (Germany)
G. Schaller, Max-Planck-Institut für extraterrestrische Physik (Germany)
MPI Halbleiterlabor (Germany)
F. Schopper, Max-Planck-Institut für extraterrestrische Physik (Germany)
MPI Halbleiterlabor (Germany)
H. Soltau, PNSensor GmbH (Germany)
MPI Halbleiterlabor (Germany)
L. Strüder, Max-Planck-Institut für extraterrestrische Physik (Germany)
MPI Halbleiterlabor (Germany)
S. Wölfel, Max-Planck-Institut für extraterrestrische Physik (Germany)
MPI Halbleiterlabor (Germany)


Published in SPIE Proceedings Vol. 6276:
High Energy, Optical, and Infrared Detectors for Astronomy II
David A. Dorn; Andrew D. Holland, Editor(s)

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