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Proceedings Paper

Rapid damage-free shaping of silicon carbide using reactive atom plasma (RAP) processing
Author(s): Yogesh Verma; Andrew K. Chang; John W. Berrett; Kenneth Futtere; George J. Gardopee; Jude Kelley; Thomas Kyler; Jeonghwa Lee; Nick Lyford; David Proscia; Phillip R. Sommer
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Paper Abstract

Mechanical grinding and shaping of optical materials imparts damage that manifests itself as defects and cracks that can propagate well below the surface of the optic. Mitigation of damage is necessary to preserve the integrity of the optic and relieve residual stress that can be detrimental to its performance. Typically, a sequence of subsequent polishing steps with finer and finer grit sizes is used to remove damage, but the process can be painfully slow especially for hard materials such as silicon carbide and often fails to remove all the damage. Reactive Atom Plasma (RAPTM) processing, a non-contact, atmospheric pressure plasma-based process, has been shown to reveal and mitigate sub-surface damage in optical materials. Twyman stress tests on thin glass and SiC substrates demonstrate RAP's ability to relieve the stress while at the same time improving surface form.

Paper Details

Date Published: 6 July 2006
PDF: 8 pages
Proc. SPIE 6273, Optomechanical Technologies for Astronomy, 62730B (6 July 2006); doi: 10.1117/12.671969
Show Author Affiliations
Yogesh Verma, RAPT Industries, Inc. (United States)
Andrew K. Chang, RAPT Industries, Inc. (United States)
John W. Berrett, RAPT Industries, Inc. (United States)
Kenneth Futtere, RAPT Industries, Inc. (United States)
George J. Gardopee, RAPT Industries, Inc. (United States)
Jude Kelley, RAPT Industries, Inc. (United States)
Thomas Kyler, RAPT Industries, Inc. (United States)
Jeonghwa Lee, RAPT Industries, Inc. (United States)
Nick Lyford, RAPT Industries, Inc. (United States)
David Proscia, RAPT Industries, Inc. (United States)
Phillip R. Sommer, RAPT Industries, Inc. (United States)

Published in SPIE Proceedings Vol. 6273:
Optomechanical Technologies for Astronomy
Eli Atad-Ettedgui; Joseph Antebi; Dietrich Lemke, Editor(s)

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